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  • Achieve Bidirectional Control and Protection Through Back-to-Back . . .
    The back-to-back connected MOSFETs either in common source or common-drain configuration as shown in Figure 5, Figure 7, and Figure 8, provides symmetrical OFF-state blocking characteristics similar to bidirectional power switch
  • Reverse Current Protection using two PMOS in back to back configuration
    Hi Hong Pan, LM74700-Q1 is an ideal diode controller that can be used to drive N-Channel MOSFET to block reverse current for 50V application upto 65V maximum Could you please let us know the current requirement for this charging application If you require back-back configuration, LM5060 device needs to be added along with LM74700-Q1 Regards, Kari
  • TPS4810-Q1 100V Automotive Low IQ, Back-to-Back MOSFET Smart High Side . . .
    The TPS48100-Q1 is a 100V low IQ smart high side driver with protection and diagnostics With wide operating voltage range from 3 5V to 95V, the device is an excellent choice for 12V, 24V, and 48V system designs The device can withstand and protect the loads from negative supply voltages down to –65V
  • Six System Architectures With Robust Reverse Battery Protection Using . . .
    This application report highlights how the new LM74800-Q1 back-to-back power N-channel FET-based ideal diode controller with load dump protection simplifies the reverse battery protection system design and how it enables various front-end protection circuit design architectures based on common drain, common source topology of the back-to-back FETs, ORing and Power MUXing
  • Three Ways to Use High Side Switch Driver Using LM74502
    Back-to-Back MOSFET Driver Using LM74502 The LM74502 controller has all the features necessary to implement a reverse polarity protection circuit with load disconnect feature as shown in Figure 2
  • LM7472EVM: Common Source or Common Drain in Back-to-Back
    Hi Shoji, The FETs orientation is the difference in common source and common drain topology In common drain topology, the ideal diode FET is connected at the input and the load switch FET is connected at the output So, the common drain point is an Always ON node as the ideal diode FET will conduct even when the FET is turned OFF for Vin > Vout In common source topology, the load switch FET
  • Reverse Current Protection Using MOSFET and Comparator to Minimize . . .
    ABSTRACT This application note describes how to implement Reverse Current Protection (RCP) using a comparator and a N-Channel MOSFET RCP is a crucial protection scheme in load sharing applications where a dip in one line can result in an influx of current in another This document presents a discrete alternative solution to protect against reverse current for cost-constrained systems
  • LM7480 3-V to 65-V, Ideal Diode Controller Driving Back to Back NFETs
    9 1 Overview The LM7480 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON OFF control, inrush current limiting and overvoltage protection The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs
  • Switching circuit design with back-to-back P-MOSFETs
    I am planning to do a switching circuit by using back to back P-MOSFETs Switching Voltage - 0 8VDC to 65VDC Switching Current - 0 8V 3A and 65 12A I am using a negative voltage supply to drive the MOSFET
  • TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side . . .
    45V low IQ automotive high-side driver with back-to-back MOSFET control, short-circuit protection, and diagnostics for advanced power management





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